1/6 STPS120M ? march 2002 - ed : 1a power schottky rectifiers n very small conduction losses n negligible switching losses n extremely fast switching n low forward voltage drop for higher efficiency & extended battery life n low thermal resistance features and benefits single schottky rectifier suited for switch mode power supplies and high frequency dc to dc converters. packaged in st mite, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. due to the small size of the package this device fits battery powered equipment (cellular, notebook, pdas, printers) as well chargers and pcmcia cards. description st mite (do-216aa) symbol parameter value unit v rrm repetitive peak reverse voltage 20 v i f(rms) rms forward current 2 a i f(av) average forward current tc = 140c d = 0.5 1 a i fsm surge non repetitive forward current tp = 8.3 ms sinusoidal 50 a t stg storage temperature range - 65 to + 150 c tj maximum operating junction temperature* 150 c dv/dt critical rate of rise of reverse voltage (rated vr, tj = 25c) 10000 v/ m s absolute ratings (limiting values) a c i f(av) 1a v rrm 20 v tj (max) 150c v f (max) 0.41 v main product characteristics *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink
STPS120M 2/6 symbol parameter tests conditions value unit min. typ. max. i r * reverse leakage current tj = 25c v r =v rrm 1.3 3.9 m a tj = 100c 275 850 tj = 25c v r = 10 v 0.6 2.0 tj = 100c 145 450 tj = 25c v r = 5 v 0.4 1.0 tj = 100c 105 300 v f * forward voltage drop tj = 25c i f = 1a 0.44 0.49 v tj = 100c 0.36 0.41 tj = 25c i f = 2 a 0.48 0.54 tj=100c 0.42 0.48 pulse test : * tp 380 s, d 2% to evaluate the conduction losses use the following equation : p=0.34xi f(av) + 0.07 i f 2 (rms) static electrical characteristics symbol parameter value unit r th (j-c) junction to case 20 c/w r th (j-a) junction to ambient with minimum recommended pad size, pc board fr4 250 c/w thermal resistance
STPS120M 3/6 d = 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 if(av)(a) pf(av)(w) d = 0.05 d = 0.2 d = 0.5 d = 0.1 t d =tp/t tp fig. 1: conduction losses versus average current. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 25 50 75 100 125 150 tamb(c) rth(j-a)=rth(j-c) rth(j-a)=270c/w if(av)(a) t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d = 0.5) 0 2 4 6 8 10 12 14 16 18 20 22 1.e-03 1.e-02 1.e-01 1.e+00 t(s) tc=25c tc=75c tc=125c i m t d =0.5 im(a) fig. 3: non repetitive surge peak forward current versus overload duration (maximum values). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 tp(s) t d =tp/t tp zth(j-c)/rth(j-c) d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4: relative variation of thermal impedance junction to case versus pulse duration. 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 02468101214161820 vr(v) tj=150c tj=125c tj=25c tj=100c tj=75c tj=50c ir(ma) fig. 5: reverse leakage current versus reverse voltage applied (typical values). 10 100 1000 1 10 100 vr(v) f=1mhz vosc=30mv tj=25c c(pf) fig. 6: junction capacitance versus reverse voltage applied (typical values).
STPS120M 4/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 vfm(v) tj=25c (maximum values) tj=100c (maximum values) tj=100c (maximum values) tj=100c (typical values) tj=100c (typical values) ifm(a) fig. 7-1: forward voltage drop versus forward cur- rent (low level). 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 vfm(v) tj=25c (maximum values) tj=100c (maximum values) tj=100c (maximum values) tj=100c (typical values) tj=100c (typical values) ifm(a) fig. 7-2: forward voltage drop versus forward cur- rent (high level) 0 50 100 150 200 250 300 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 s(cm2) rth(j-a)/(c/w) fig. 8: thermal resistance junction to ambient ver- sus copper surface under tab (epoxy printed board fr4, cu = 35m).
STPS120M 5/6 package mechanical data st mite c l2 l a1 r1 r 0 to 6 b h b2 d l3 a e ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.85 1.00 1.15 0.033 0.039 0.045 a1 0.10 0.004 b 0.40 0.65 0.016 0.025 b2 0.70 1.00 0.027 0.039 c 0.10 0.25 0.004 0.010 d 1.75 1.90 2.05 0.069 0.007 0.081 e 1.75 1.90 2.05 0.069 0.007 0.081 h 3.60 3.75 3.90 0.142 0.148 0.154 l 0.50 0.63 0.80 0.047 0.025 0.031 l2 1.20 1.35 1.50 0.047 0.053 0.059 l3 0.50 ref (typ.) 0.019 ref (typ.) r 0.07 0.003 r1 0.07 0.003 note: the anode is connected to the longer tab the cathode is connected to the shorter tab (heatsink) 2.67 2.54 0.762 1.27 0.635 footprint (dimensions in mm)
STPS120M 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com type marking package weight base qty delivery mode STPS120M 120 st mite 15.5 mg 12000 tape & reel
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